MAGNETIC FIELD AND SURFACE INFLUENCES ON DOUBLE INJECTION PHENOMENA IN SEMICONDUCTORS. I: THE MAGNETODIODE EFFECT THEORY FOR THE SEMICONDUCTOR AND INSULATOR REGIMESCRISTOLOVEANU S.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 683-695; ABS. FRE; BIBL. 26 REF.Article

CONTRIBUTION A L'ETUDE DE L'EFFET DE MAGNETOCONCENTRATION. UTILITE DU FORMALISME DE BOLTZMANN.CRISTOLOVEANU S.1977; J. PHYS., LETTRES; FR.; DA. 1977; VOL. 38; NO 2; PP. L69-L71; ABS. ANGL.; BIBL. 10 REF.Article

INFLUENCE DES SURFACES SUR L'EFFET ETTINGSHAUSEN. APPLICATION A LA CARACTERISATION DE SEMICONDUCTEURS A FAIBLE LARGEUR DE BANDE INTERDITE.CRISTOLOVEANU S.1976; ; S.L.; DA. 1976; PP. 1-97; BIBL. 2 P. 1/2; (THESE INST. NATL. POLYTECH.; GRENOBLE)Thesis

A review of the electrical properties of SIMOX substrates and their impact on device performanceCRISTOLOVEANU, S.Journal of the Electrochemical Society. 1991, Vol 138, Num 10, pp 3131-3139, issn 0013-4651Article

MAGNETOCONCENTRATION AND RELATED GALVANOMAGNETIC EFFECTS IN NON-INTRINSIC SEMICONDUCTORSCRISTOLOVEANU S; LEE JH.1980; J. PHYS. C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 32; PP. 5983-5997; BIBL. 20 REF.Article

INFLUENCE OF SURFACES ON THE ETTINGSHAUSEN EFFECT. APPLICATION TO THE CHARACTERIZATION OF NARROW-GAP SEMICONDUCTORS.CRISTOLOVEANU S; VIKTOROVITCH P.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 1; PP. 109-116; ABS. FR.; BIBL. 12 REF.Article

CARRIER CONCENTRATION UNDER HIGH MAGNETIC FIELDSCRISTOLOVEANU S; CHOVET A; LAKEOU S et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. 927-938; BIBL. 18 REF.Article

HIGH-MAGNETIC-FIELD VAN DER PAUW METHOD: MAGNETORESISTANCE MEASUREMENT AND APPLICATIONSMARION D; CRISTOLOVEANU S; CHOVET A et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 4; PP. 125-130; BIBL. 23 REF.Article

AN INTEGRATED MAGNETIC SENSOR: THE SILICON ON SAPPHIRE SCHOTTKY MAGNETODIODECRISTOLOVEANU S; MOHAGHEGH A; DE PONTCHARRA J et al.1980; J. PHYS., LETTRES; FRA; DA. 1980; VOL. 41; NO 9; PP. L235-L237; ABS. FRE; BIBL. 13 REF.Article

On the role of exact boundary conditions in phototransport phenomena; case of SI-GaAsKANG, K. N; CRISTOLOVEANU, S.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K155-K159, issn 0031-8965Article

Hot-carrier degradation mechanisms in silicon-on-insulator MOSFETSCRISTOLOVEANU, S.Microelectronics and reliability. 1997, Vol 37, Num 7, pp 1003-1013, issn 0026-2714Article

Point-contact pseudo-MOSFET for In-situ characterization of As-crown silicon-on-insulator wafersCRISTOLOVEANU, S; WILLIAMS, S.IEEE electron device letters. 1992, Vol 13, Num 2, pp 102-104, issn 0741-3106Article

Adjustable confinement of the electron gas in dual-gate silicon-on-insulator MOSFET'sCRISTOLOVEANU, S; IOANNOU, D. E.Superlattices and microstructures. 1990, Vol 8, Num 1, pp 131-135, issn 0749-6036, 5 p.Article

Accurate technique for CV measurements on SOI structures excluding parasitic capacitance effectsJONG-HYUN LEE; CRISTOLOVEANU, S.IEEE electron device letters. 1986, Vol 7, Num 9, pp 537-539, issn 0741-3106Article

The field-assisted photomagnetoelectric effect: theory and experiment in semi-insulating GaAsCRISTOLOVEANU, S; KANG, K. N.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 4, pp 699-712, issn 0022-3719Article

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionHADDARA, H; CRISTOLOVEANU, S.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 378-385, issn 0018-9383Article

Theory of the field-assisted photomagnetoelectric effect in thin films: experiment on n-type GaAs and applicationsKWANG NHAM KANG; CRISTOLOVEANU, S.Thin solid films. 1984, Vol 114, Num 4, pp 335-347, issn 0040-6090Article

The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulatorDUTTA, P. K; CRISTOLOVEANU, S.Microelectronics journal. 1991, Vol 22, Num 7-8, pp 67-76, issn 0959-8324Article

Profiling of stress induced interface states in short channel MOSFET's using a composite charge pumping techniqueHADDARA, H; CRISTOLOVEANU, S.Solid-state electronics. 1986, Vol 29, Num 8, pp 767-772, issn 0038-1101Article

Defect localization induced by hot carrier injection in short-channel MOSFETs: concept, modeling and characterizationCRISTOLOVEANU, S; HADDARA, H; REVIL, N et al.Microelectronics and reliability. 1993, Vol 33, Num 9, pp 1365-1385, issn 0026-2714Article

Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET'sFANG, Z. H; CRISTOLOVEANU, S; CHOVET, A et al.IEEE electron device letters. 1986, Vol 7, Num 6, pp 371-373, issn 0741-3106Article

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF stateDOBROVOLSKY, V; SIZOV, F; CRISTOLOVEANU, S et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1047-1051, issn 0038-1101, 5 p.Article

Special mechanisms in thin-film SOI MOSFETsBALESTRA, F; CRISTOLOVEANU, S.Microelectronics and reliability. 1997, Vol 37, Num 9, pp 1341-1351, issn 0026-2714Conference Paper

Measurement and modeling of drain current DLTS in enhancement SOI MOSFETsHADDARA, H; ELEWA, M. T; CRISTOLOVEANU, S et al.Microelectronics journal. 1993, Vol 24, Num 6, pp 647-657, issn 0959-8324Article

Unusual floating body effect in fully depleted MOSFETsBAWEDIN, M; CRISTOLOVEANU, S; FLANDRE, D et al.IEEE international SOI conference. 2004, pp 151-152, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper